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Endurance analysis of 8M-bits Phase Change Memory

  

Linhai Xu*, Xiaogang Chen ,Yifeng Chen , Houpeng Chen , Zhitang Song

 

Abstract: The first Chinese 8M-bits Phase Change Memory (PCM) had been successfully developed basing on the standard 0.13 μm CMOS process. In order to investigate the lifetime of the memory cell, the endurance properties of the memory is analyzed by serials of detailed experiments. The processes of ‘stuck-SET’ failure and ‘stuck-RESET’ failure are studied. Meanwhile, with the increasing cycles, an obvious improvement in the RESET/SET window is observed, which induced by SET resistance decrease and RESET resistance increase during the process. Moreover, the RESET and SET resistance distributions changes during the cycling are reported.

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